Operational aspects of chemical mechanical polishing - Polish pad profile optimization

被引:29
|
作者
Chen, CY [1 ]
Yu, CC
Shen, SH
Ho, M
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 10607, Taiwan
[2] Appl Mat Taiwan, Hsinchu 300, Taiwan
关键词
D O I
10.1149/1.1393997
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Despite recent advances in chemical mechanical polishing (CMP), some manufacturing concerns associated with successful implementation of CMP remain to be overcome, e.g.. degradation in the removal rate, nonuniformity of material removal, etc. In this work, the characteristics of the relative velocity for pad conditioning are explored and a generalized Preston equation, taking the pad topology into account. is formulated. From experimental data, important characteristics for the pad wear Juring conditioning are identified. That is the actual conditioning time, the characteristic time, plays a determinant role in the pad wear. provided with the wear rate (WR) equation, optimization on operating variables reveals that, as a result of the sweeping, it is difficult, if not impossible, to maintain a uniform pad profile. However, the setting of operating variables and design modification can be used to alleviate possible nonuniformity on the pad profile. That implies we have to make the ratio of disk-radius-to-pad-radius as small as possible (to eliminate the edge effect). Next the importance of setting of the number of zones and corresponding relative time (retention time at each zone) is emphasized. A procedure for setting these operating parameters is also given. (C) 2000 The Electrochemical Society. S0013-4651(00)02-029-9. All rights reserved.
引用
收藏
页码:3922 / 3930
页数:9
相关论文
共 50 条
  • [1] Impact of polish pad imperfections on chemical mechanical polishing defects
    Kincal, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (08) : G742 - G745
  • [2] Polishing Pad in Chemical Mechanical Polishing
    Cao W.
    Deng Z.-H.
    Li Z.-Y.
    Ge J.-M.
    Surface Technology, 2022, 51 (07): : 27 - 41
  • [3] Polish rate, pad surface morphology and pad conditioning in oxide chemical mechanical polishing
    Lawing, AS
    CHEMICAL MECHANICAL PLANARIZATION V, 2002, 2002 (01): : 46 - 60
  • [4] Pad conditioning in chemical mechanical polishing
    Hooper, BJ
    Byrne, G
    Galligan, S
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2002, 123 (01) : 107 - 113
  • [5] Modeling of Polishing Pad Wear in Chemical Mechanical Polishing
    Li, Mao
    Zhu, Yongwei
    Li, Jun
    Lin, Kui
    MACHINING AND ADVANCED MANUFACTURING TECHNOLOGY X, 2010, 431-432 : 318 - 321
  • [6] Kinematical Modeling of Pad Profile Variation during Conditioning in Chemical Mechanical Polishing
    Lee, Sangjik
    Jeong, Sukhoon
    Park, Kihyun
    Kim, Hyoungjae
    Jeong, Haedo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (12)
  • [7] Polishing Characteristics of Hydrophilic Pad in Chemical Mechanical Polishing Process
    Tsai, Ming-Yi
    Chen, Chiou-Yuan
    He, Ying-Rong
    MATERIALS AND MANUFACTURING PROCESSES, 2012, 27 (06) : 650 - 657
  • [8] Analysis on pad effects in chemical mechanical polishing
    School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044, China
    不详
    Beijing Jiaotong Daxue Xuebao, 2007, 1 (18-21):
  • [9] Contribution of porous pad to chemical mechanical polishing
    Zhang, Chaohui
    Luo, Jianbin
    NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2, 2007, 121-123 : 1133 - 1137
  • [10] PAD MATERIALS FOR CHEMICAL-MECHANICAL POLISHING
    MENDEL, E
    KAPLAN, P
    PATSIS, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C128 - C128