FePt alloy thin films with cap-layers of MgO or C are prepared on MgO(001) single-crystal substrates by using a two-step method consisting of low-temperature deposition at 200 degrees C followed by high-temperature annealing at 600 degrees C. The FePt film thickness is fixed at 10 nm, whereas the cap-layer thickness is varied from 1 to 10 nm. The influences of cap-layer material and cap-layer thickness on the variant structure and the L1(0) ordering are investigated. Single-crystal FePt(001) films with disordered fcc structure (A1) grow epitaxially on the substrates at 200 degrees C. Single-crystal MgO(001) cap-layers grow epitaxially on the FePt films, whereas the structure of C cap-layers is amorphous. The phase transformation from A1 to L1(0) occurs when the films are annealed at 600 degrees C. The FePt films with MgO cap-layers thicker than 2 nm consist of L1(0)(001) variant with the c-axis perpendicular to the substrate surface, whereas those with C cap-layers involve small volumes of L1(0)(100) and (010) variants with the c-axis lying in the film plane. The in-plane and the out-ofplane lattices are respectively more expanded and contracted in the continuous-lattice MgO/FePt/MgO structure due to accommodations of misfits of FePt film with respect to not only the MgO substrate but also the MgO cap-layer. The lattice deformation promotes phase transformation along the perpendicular direction and L1(0) ordering. The FePt films consisting of only L1(0)(001) variant show strong perpendicular magnetic anisotropies and low in-plane coercivities. The present study shows that an introduction of epitaxial cap-layer is effective in controlling the c-axis perpendicular to the substrate surface. (C) 2017 Author(s).
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Chuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, JapanChuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan
Noguchi, Youhei
Ohtake, Mitsuru
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Chuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan
Kogakuin Univ, Fac Engn, 2655-1 Nakanomachi, Hachioji, Tokyo 1920015, JapanChuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan
Ohtake, Mitsuru
Futamoto, Masaaki
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Chuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, JapanChuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan
Futamoto, Masaaki
Kirino, Fumiyoshi
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Tokyo Univ Arts, Grad Sch Fine Arts, Taito Ku, 12-8 Ueno Koen, Tokyo 1108714, JapanChuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan
Kirino, Fumiyoshi
Inaba, Nobuyuki
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Yamagata Univ, Fac Engn, 4-3-16 Jyonan, Yonezawa, Yamagata 9928510, JapanChuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Park, J. K.
Lee, W. H.
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Lee, W. H.
Yoo, J. H.
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Natl Nanofab Ctr, Measurement & Anal Team, Taejon 305806, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Yoo, J. H.
Yang, J. M.
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Natl Nanofab Ctr, Measurement & Anal Team, Taejon 305806, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea