Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells

被引：4
|
作者：
Yang, CS
Cheng, CC
Kuo, MC
Tseng, PY
Shen, JL
Lee, J
Chou, WC [1 ]
Jeng, S
Lai, CY
Hsu, TM
Chyi, JI
机构：
[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
[2] Chung Yuan Christian Univ, Ctr Nanotechnol, Chungli 32023, Taiwan
[3] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan
[4] Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan
[5] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
THIN SOLID FILMS | 2003年 / 429卷 / 1-2期
关键词：
molecular beam epitaxy; transmission electron microscopy; photon emission; band structure;
D O I：
10.1016/S0040-6090(02)01112-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn1-xMnxSe layers. Holes were localized in the ZnSe1-yTey. layers. The respective valence and conduction band offset were determined as 350+/-50 and 205+/-50 meV. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：243 / 247
页数：5
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