Effect of Au deposition rate on the performance of top-contact pentacene organic field-effect transistors

被引：8
|
作者：
Zhang, Xiao-Hong [1 ]
Domercq, Benoit [1 ]
Kippelen, Bernard [1 ]
机构：
[1] Georgia Inst Technol, COPE, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
SYNTHETIC METALS | 2009年 / 159卷 / 21-22期
基金：
美国国家科学基金会;
关键词：
Organic field-effect transistor; Pentacene; Au diffusion; DIFFUSION;
D O I：
10.1016/j.synthmet.2009.08.020
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A study of the influence of the deposition rate of top-contact Au source and drain electrodes deposited by electron-beam evaporation on the electrical performance of pentacene organic field-effect transistors (OFETs) is presented. By adjusting the deposition rate of the Au electrodes to minimize metal diffusion into the semiconductor pentacene layer, the source/drain contact resistance could be reduced. At a Au deposition rate of 10 angstrom/s, high-performance pentacene-p-channel OFETs were obtained with a field-effect mobility of 0.9 cm(2)/Vs and a normalized channel width resistance of 23 k Omega cm in a device with a channel length of 25 mu m. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：2371 / 2374
页数：4
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