Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

被引：5
|
作者：
Heo, Junseok [1 ]
Zhu, Ting [2 ]
Zhang, Chunfeng [2 ]
Xu, Jian [2 ]
Bhattacharya, Pallab [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
[2] Penn State Univ, Dept Engn Sci & Mech, University Pk, PA 16802 USA
来源：
OPTICS LETTERS | 2010年 / 35卷 / 04期
基金：
美国国家科学基金会;
关键词：
NANOCRYSTALS;
D O I：
10.1364/OL.35.000547
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at lambda = 1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of similar to 420. (C) 2010 Optical Society of America
引用
收藏
页码：547 / 549
页数：3
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