Steady-state thermal resistance measurement of light-emitting diodes based on spectroscopic method

被引:1
|
作者
Jiang Fu-Chun [1 ]
Liu Rui-You [1 ]
Peng Dong-Sheng [1 ]
Liu Wen [1 ]
Chai Guang-Yue [1 ]
Li Bai-Kui [1 ]
Wu Hong-Lei [1 ]
机构
[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Provice, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
light emission diode; steady-state thermal resistance; trough; heat dissipation power; DETERMINING JUNCTION TEMPERATURE;
D O I
10.7498/aps.70.20201093
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
According to the luminous spectrum characteristics of white light emission diode (WLED) light emission spectrum, through the analysis of the intersection (the trough point of the whole spectrum) of blue light spectrum and yellow light spectrum generated by blue light excited yellow phosphor, in this paper we design an LED steady-state thermal resistance measurement system based on the spectroscopic method by using the conventional spectrometer, and we also use the normal driving current to fit the whole spectrum trough through a certain function algorithm. According to the temperature rise curve, we can calculate the temperature rise of the LED junction temperature relative to the substrate under any working condition, and combine the heat dissipation power of the LED to get the steady-state thermal resistance of the LED. This method avoids the limitation of a similar forward voltage drop method which uses the minimum current calibration and requires the modules of high-speed data acquisition and high-speed sampling conversion, thus making the equipment expensive. Therefore it is necessary to reduce its cost. Finally, the system designed in this paper and the T3Ster instrument of Mentor Graphics Corporation in the United States are both used to measure various LEDs and their results are compared with each other. The results show that the maximum deviation of steady-state thermal resistance is only 3.64%. It indicates that the system and method designed in this paper can achieve the same precision as T3Ster instrument of Mentor Graphics Corporation, demonstrating that the system and method designed in this paper can achieve the same precision as the T3Ster instrument of Mentor Graphics, under the condition without needing expensive equipment, Moreover, this method uses non-traditional spectral method to measure the junction temperature of LED, which has the characteristics of remote real-time online detection of LED junction temperature, low cost, and no restrictions on the LED packaging structure. Therefore, this method has a wider application range than the voltage method adopted by Mentor Graphics T3Ster equipment, and has a certain practical value.
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页数:8
相关论文
共 19 条
  • [1] Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED
    Chen Gui-Feng
    Tan Xiao-Dong
    Wan Wei-Tian
    Shen Jun
    Hao Qiu-Yan
    Tang Cheng-Chun
    Zhu Jian-Jun
    Liu Zong-Shun
    Zhao De-Gang
    Zhang Shu-Ming
    [J]. ACTA PHYSICA SINICA, 2011, 60 (07)
  • [2] Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis
    Chen, Keng
    Narendran, Nadarajah
    [J]. MICROELECTRONICS RELIABILITY, 2013, 53 (05) : 701 - 705
  • [3] Relationship between light efficiency and juction temperature of high power AlGaInP light-emitting diode
    Chen Yi-Xin
    Shen Guang-Di
    Gao Zhi-Yuan
    Guo Wei-Ling
    Zhang Guang-Chen
    Han Jun
    Zhu Yan-Xu
    [J]. ACTA PHYSICA SINICA, 2011, 60 (08)
  • [4] [程星福 Cheng Xingfu], 2014, [光电子·激光, Journal of Optoelectronics·Laser], V25, P1949
  • [5] The investigation of LED degradation model based on the chemical kinetics
    Guo Chun-Sheng
    Zhang Yan-Feng
    Wan Ning
    Li Rui
    Zhu Hui
    Feng Shi-Wei
    [J]. ACTA PHYSICA SINICA, 2013, 62 (21)
  • [6] A method for projecting useful life of LED lighting systems
    Hong, E
    Narendran, N
    [J]. THIRD INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 2004, 5187 : 93 - 99
  • [7] A Measurement Method Based on Characteristic Spectral Parameter for Determining Junction Temperature of LED
    Jiang Fu-chun
    He Si-yu
    Liu Yuan-hai
    Liu Wen
    Chai Guang-yue
    Zhao Zhi-gang
    Li Hai-kui
    [J]. ACTA PHOTONICA SINICA, 2020, 49 (03)
  • [8] A Measurement Method Base on FWHM for Determining Junction Temperature of LED
    Jiang Fu-chun
    He Si-yu
    Liu Yuan-hai
    Liu Wen
    Chai Guang-yue
    Li Bai-kui
    Peng Dong-sheng
    [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2020, 40 (07) : 2087 - 2091
  • [9] Raman thermometry based thermal resistance analysis of GaN high electron mobility transistors with copper-based composite flanges
    Liu Kang
    Sun Hua-Rui
    [J]. ACTA PHYSICA SINICA, 2020, 69 (02)
  • [10] Qin X M, 1996, SEMICONDUCTOR TECHNO, V3, P32