ZnO thin films prepared by remote plasma-enhanced CVD method

High-quality ZnO films were successfully prepared by a remote plasma-enhanced CVD of Zn(C2H5)(2) and carbon dioxide, Plasma excitation in carbon dioxide was critically important to deposit films with good crystallinity. Epitaxial growth could be achieved on (0002) or (0 1 (1) over bar 2) oriented single-crystal sapphire substrates using this simple system. Reflection high-energy electron diffraction and X-ray diffraction patterns show that the ZnO(1 1 (2) over bar 0) plane is formed on the sapphire (0 1 (1) over bar 2) plane and the ZnO(0 0 0 2) plane is formed on the sapphire (0 0 0 2) plane. Cathodoluminescence spectra of the epitaxial films grown at plasma discharge voltage of 3.6 kV consist of a sharp band at 380 nm and a broad band centered at 620nm. (C) 2000 Elsevier Science B.V. All rights reserved.