Polariton relaxation dynamics in semiconductor microcavities: Non-Markovian effects

被引：0

作者：

Rodriguez, F. J. ^{[1
]}

Quiroga, L.

Tejedor, C. ^{[2
]}

Martin, M. D. ^{[2
]}

Vina, L. ^{[2
]}

机构：

[1] Univ Los Andes, Dept Fis, Bogota 4976, Colombia

[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, Cantoblanco, E-28049 Madrid, Spain

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

polariton dynamics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report results on the theoretical study of the ultrafast relaxation of polaritons in semiconductor microcavities. The photoluminescence decay dynamics is found to be controlled by the initial density of excitons. In the high density regime, the parametric conversion of excitons dominates the relaxation with memory (Non-Markov) effects producing a non-monotonous decay of the emission signal. This behavior agrees with recent experimental observations.

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页码：1151 / +

页数：2

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