Microwave Properties of RF- Sputtered ZnFe2O4 Thin Films

被引：2
|
作者：
Garg, T. [1 ]
Sahu, B. N. [2 ]
Prasad, Shiva [2 ]
Kulkarni, A. R. [1 ]
Venkataramani, N. [1 ]
机构：
[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India
[2] Dept Phys, IIT Bombay, Mumbai 400076, India
来源：
SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B | 2014年 / 1591卷
关键词：
Ferromagnetic resonance; ferrites; microwave; FERROMAGNETIC-RESONANCE;
D O I：
10.1063/1.4872834
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, RF- magnetron sputtering technique has been employed to deposit nanocrystalline ZnFe2O4 thin films at room temperature. The as grown films were ex-situ annealed in air for 2 h at temperatures from 150 degrees C to 650 degrees C. X-ray diffraction, vibrating sample magnetometer and ferromagnetic resonance were used to analyze the phase formation, magnetic properties and microwave properties respectively. From the hysteresis loops and ferromagnetic resonance spectra taken at room temperature, a systematic study on the effect of O-2 plasma on microwave properties with respect to processing temperature has been carried out.
引用
收藏
页码：1006 / 1008
页数：3
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