Strain-induced bandgap engineering in C3N nanotubes

Theoretical calculations have been used to investigate the electronic properties of C3N nanotubes (C3NNTs) and their tuning by applying strain. The C3NNTs are semiconductors and the application of strain can greatly adjust their bandgaps and carrier mobilities. Compressive strain along the axial direction enlarges the bandgap while the tensile strain reduces the bandgap of the nanotubes. Different carrier mobilities of armchair, zigzag and chiral C3NNTs under external strain have been revealed. Therefore, external strain is expected to be a powerful tool to modulate the electronic properties of C3NNTs, making C3NNTs to have promising applications in nano scale sensors and electronic devices.