Switching Losses in a 1.7 kW GaN based Full-Bridge DC-DC Converter with Synchronous Rectification

被引：0
|
作者：
Ramachandran, Rakesh [1 ]
Nymand, Morten [1 ]
机构：
[1] Univ Southern Denmark, Maersk Mc Kinney Moller Inst, DK-5230 Odense, Denmark
来源：
2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE) | 2015年
关键词：
Converter circuit; Gallium Nitride (GaN); MOSFET; Measurement; Power semiconductor device; Transformer; Switched-mode power supply; Switching losses; Wide bandgap devices;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The paper presents the detailed analysis of switching losses in GaN devices for an isolated full-bridge dc-dc converter. Switching losses includes capacitive losses along with turn-on and turn-off losses of the power MOSFET. In hard switched converters, the output capacitance of MOSFET contributes to a significant part of the switching loss. The capacitive loss analysis also helps in determining the optimum number of devices used in parallel for a given power level and switching frequency. The analysis is performed on a 1.7 kW full bridge isolated dc-dc GaN converter at a switching frequency of 50 kHz. The paper also presents the GaN switch efficiency curve for an isolated dc-dc GaN converter with different number of devices in parallel.
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页数：10
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