BEHAVIOUR OF SEMI-INSULATING GaAs ENERGY LEVELS

被引：0
|
作者：
Yannakopoulos, P. H. [1 ]
Zardas, G. E. [2 ]
Papaioannou, G. J. [2 ]
Symeonides, Ch. I. [2 ]
Vesely, M. [3 ]
Euthymiou, P. C. [2 ]
机构：
[1] Technol Educ Inst Piraeus, Comp Syst Engn Dept, GR-12244 Aigaleo, Greece
[2] Univ Athens, Dept Phys, Solid State Sect, GR-15784 Zografos, Greece
[3] Slovak Tech Univ Bratislava, Dept Microelect, Fac Elect Engn & Informat Technol, SK-81219 Bratislava, Slovakia
来源：
REVIEWS ON ADVANCED MATERIALS SCIENCE | 2009年 / 22卷 / 1-2期
关键词：
SEMI-INSULATING GAAS; EL2; CR; RECOVERY; PHOTOCONDUCTIVITY; SEMICONDUCTORS; SPECTROSCOPY; ABSORPTION; SPECTRA;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The behaviour of EL2 intrinsic defect in the Semi-Insulated (SI) undoped and Cr-doped GaAs is studied by measuring the Dember effect short circuit current. Appropriate illumination with peak in the 1100 nm region results in the transition of the EL2 state to its metastable one (EL2M). Of major importance is the Cr concentration, which is influencing the photoconductivity spectra, as in high concentrations its contribution in the photoconductivity overlaps the EL2 contribution.
引用
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页码：52 / 59
页数：8
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