Broadband mid-infrared superlattice light-emitting diodes

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 mu m mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 mu m, 3.5 mu m, 3.7 mu m, 3.9 mu m, 4.1 mu m, 4.4 mu m, 4.7 mu m, and 5.0 mu m. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1W/cm(2) sr were achieved, demonstrating apparent temperatures above 1000K over the 3-5 mu m band. InAs/GaSb type-II superlattices are capable of emitting from 3 mu m to 30 mu m, and the device design can be expanded to include longer emission wavelengths. Published by AIP Publishing.