The study of the influence of Al and Sn doping on the optical and electrical properties of ZnO thin films

被引：0
|
作者：
Prepelita, P. [1 ]
Baban, C. [1 ]
Iacomi, F. [1 ]
机构：
[1] Alexandru Ioan Cuza Univ, Fac Phys, Iasi 700506, Romania
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2007年 / 9卷 / 07期
关键词：
ZnO; thin films; TCO; doping;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO thin films on glass substrates were obtained by thermal oxidation of vacuum evaporated Zn films. The evaporated metalic films with Al/Zn, Sn/Zn and (Al+Sn)/Zn in different weight ratios were annealed for 2 h at 450 degrees C to obtain Al-doped, Sn-doped and Al+Sn-doped ZnO films. The optical properties, evaluated by UV-VIS (350-1300 nm) showed that the obtained thin films were highly transparent, with a transmission coefficient between 65 - 90 % depending on the dopant type and the ammount of doping. For the same ammount of doping the electrical resistivity of A doped films is lower than for Sn doped films but in both cases it is higher than the electrical resistivity of Al, Sn - doped films.
引用
收藏
页码：2166 / 2169
页数：4
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