Introduction to the special issue on nonvolatile memory reliability

被引：0

|

作者：

Cappelletti, P ^{[1
]}

Pavan, P

机构：

[1] STMicroelect, Cent R&D, I-20041 Agrate Brianza, MI, Italy

[2] Univ Modena, Dipartimento Sci & Metodi Ingn, I-42100 Reggio Emilia, Italy

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2004年 / 4卷 / 03期

关键词：

D O I：

10.1109/TDMR.2004.837116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：299 / 300

页数：2

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