The Effect of Oxygen Content of ITO Bottom Electrode on Degradation Characteristics of (Pb, La)(Zr, Ti)O3 capacitor

被引：0
|
作者：
Saito, Takeyasu [1 ]
Ishida, Yuki [1 ]
Kobayashi, Atsushi [1 ]
Okamoto, Naoki [1 ]
Kitajima, Akira [2 ]
Norizawa, Kimihiro [2 ]
机构：
[1] Osaka Prefecture Univ, Dept Chem Engn, Sakai, Osaka, Japan
[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Japan
来源：
2020 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC) | 2020年
关键词：
Ferroelectric capacitor; conductive oxide electorde; fatigue degradation; O-2; annealing; HYSTERESIS; FATIGUE; POLARIZATION; IMPRINT; FILMS; MODEL;
D O I：
10.1109/IITC47697.2020.9515590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ferroelectric random-access memory (FeRAM) is one of the promising candidates for future nonvolatile memory devices. High density FeRAM requires more robust electrode material for capacitor reliability to replace Pt or Ir electrodes, especially in the case of small feature. In this study, DC sputtered Sn-doped In2O3 (ITO) was employed for bottom and top electrodes of (Pb,La)(Zr,Ti)O-3 (PLZT) capacitor. The ferroelectric properties of PLZT capacitors with ITO electrodes by sputtering with difficult temperature/O-2 content and subsequent O-2 annealing. The fatigue degradation characteristics were improved by fully oxidized ITO bottom electrode.
引用
收藏
页码：106 / 108
页数：3
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