Real-Time Compact Thermal Models for Health Management of Power Electronics

被引:152
|
作者
Musallam, Mahera [1 ]
Johnson, C. Mark [1 ]
机构
[1] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England
基金
英国工程与自然科学研究理事会;
关键词
Electrothermal models; Flotherm model; half-bridge insulated gate bipolar transistor (IGBT); junction temperatures; real time; ELECTROTHERMAL SIMULATION; RATIONAL FORMULATION; CIRCUIT MODELS;
D O I
10.1109/TPEL.2010.2040634
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Implementation of real-time health assessment and thermal management of power electronic devices require real-time electrothermal models that can be used to predict the temperatures of device junctions, interfaces, etc., which cannot ordinarily be measured during service. This paper presents a real-time reduced-order compact thermal model, which is incorporated in a pulsewidth modulation and current controlled full bridge. An accurate representation of the dynamic thermal behavior was obtained experimentally and converted into a simplified multiexponential form then combined with lookup tables that provide estimates of the device losses based on measured values of the phase current. For interfaces away from the surface, such as solder layers, a validated Flotherm model is used to predict the temperatures of the hidden layers. Comparison of the real-time temperature estimates with IR measured values obtained from a high-speed IR camera showed that the reduced-order model was capable in estimating the module's temperatures over a range of modulation conditions. This real-time model is well-suited to the continuous monitoring of the internal behavior of the electrothermal effects within power electronic modules and can thus be used as part of a prognostic tool to provide knowledge through thermal cycling by combining with thermomechanical wear out models for health management of power electronics.
引用
收藏
页码:1416 / 1425
页数:10
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