Real-Time Prediction for IC Aging Based on Machine Learning

被引:17
|
作者
Huang, Ke [1 ]
Zhang, Xinqiao [1 ]
Karimi, Naghmeh [2 ]
机构
[1] San Diego State Univ, Dept Elect & Comp Engn, San Diego, CA 92182 USA
[2] Univ Maryland Baltimore Cty, Dept Comp Sci & Elect Engn, Baltimore, MD 21250 USA
关键词
Aging; Degradation; Integrated circuit modeling; Predictive models; Transistors; Stress; Equivalent aging time; hot carrier injection (HCI); machine learning; negative; positive bias temperature instability (NBTI; PBTI); real-time IC aging prediction; RELIABILITY; MANAGEMENT;
D O I
10.1109/TIM.2019.2899477
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Estimating the aging-related degradation and failure of nanoscale integrated circuits (ICs), before they actually occur, is crucial for developing aging prevention/mitigation actions and in turn avoiding unexpected in-field circuit failures. Real-time monitoring of IC operating conditions can be efficiently used for predicting aging degradation and in turn timing failures caused by device aging. The existing approaches only take some specific operating conditions (e.g., workload or temperature) into account. In this paper, we propose a novel method for real-time IC aging prediction by extending the prediction schemes to a comprehensive model which takes into account any time-variant dynamic operating conditions relevant to aging prediction. Using a machine learning prediction model and the notion of equivalent aging time, we show that our approach outperforms the existing methods in terms of aging-prediction accuracy under different scenarios of time-variant operating conditions.
引用
收藏
页码:4756 / 4764
页数:9
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