Structural modification of Gallium Lanthanum Sulfide glass induced by ultrafast laser inscription

被引:1
|
作者
Diener, Romina [1 ]
Tabacchi, Gloria [2 ]
Nolte, Stefan [1 ]
Minardi, Stefano [1 ,3 ]
机构
[1] Friedrich Schiller Univ, Inst Appl Phys, Max Wien Pl 1, D-07743 Jena, Germany
[2] Univ Insubria, DSAT, Via Valleggio 9, I-22100 Como, Italy
[3] Leibnitz Inst Astrophys, InnoFSPEC, Sternwarte 16, D-14482 Potsdam, Germany
来源
关键词
Chalcogenide glasses; ultrafast laser inscription; structure of glasses; CIRCUITS;
D O I
10.1117/12.2250591
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a preliminary experimental chemical-physical characterisation of the structural modification of Gallium Lanthanum Sulfide (GLS) glass occurring during ultrafast laser inscription of waveguides in thermal regime. Our measurements with a micro-Raman spectrograph confirmed previous reports of negligible chemical modification of the irradiated glass. Additionally, the observed onset of significant long-range stress patterns surrounding the irradiated regions indicate that GLS is subject to an irradiation-induced densification of the glass network. We discuss the consequences of these observations for the amelioration of the laser inscription techniques in chalcogenide glasses and, potentially, for the understanding of their microscopic structure.
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页数:6
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