Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates by Metal-organic Chemical-vapor Deposition

被引：4

作者：

Park, Young S. ^{[1
]}

Kwon, Y. H. ^{[1
]}

Im, Hyunsik ^{[2
]}

Jung, Woong ^{[2
]}

Kim, Hyungsang ^{[3
]}

Kim, Minseon ^{[3
]}

Yang, W. C. ^{[3
]}

Lee, Junho ^{[4
]}

Choi, Hong Goo ^{[4
]}

Roh, Cheong Hyun ^{[4
]}

Hahn, Cheol-Koo ^{[4
]}

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea

[3] Dongguk Univ, Dept Phys, Seoul 100715, South Korea

[4] Korea Elect Technol Inst, Elect Power IT Res Ctr, Songnam 463816, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 56卷 / 04期

关键词：

Dislocation defects; Cathodoluminescence; GaN; MORPHOLOGY; SURFACE;

D O I：

10.3938/jkps.56.1172

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dislocation defects in GaN epilayers grown on Si substrates were investigated using cathodoluminescence (CL) and atomic force microscopy (AFM). The dislocation densities of the films were deduced from two-dimensional CL image measurements and ranged from 1 x 10(11) cm(-2) to 5 x 10(11) cm(-2). These values are larger than those reported for GaN epilayers grown on sapphire substrates. The surface morphology and dislocations in the GaN epilayers were investigated by using AFM. From a comparative study of the CL and the AFM measurements, the GaN epilayers with lower dislocation densities are seen to have good surface morphologies with smaller densities of surface defects.

引用

页码：1172 / 1175

页数：4

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