Two-micron lasing in NaLa1/2Gd1/2(WO4)2 crystals doped with Tm3+ ions

被引：9
|
作者：
Bol'shchikov, F. A. [1 ]
Zharikov, E. V. [2 ]
Zakharov, N. G. [3 ]
Lis, D. A. [2 ]
Ryabochkina, P. A. [1 ]
Subbotin, K. A. [2 ]
Antipov, O. L. [3 ]
机构：
[1] NP Ogarev Mordovian State Univ, Saransk 430005, Russia
[2] Russian Acad Sci, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
[3] Russian Acad Sci, Inst Appl Sci, Nizhnii Novgorod 603950, Russia
来源：
QUANTUM ELECTRONICS | 2010年 / 40卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
two-micron lasing; Tm3+ ions; NaLa0.5Gd0.5 (WO4)(2) crystals;
D O I：
10.1070/QE2010v040n02ABEH014242
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lasing on the F-3(4) -> H-3(6) transition of Tm3+ ions in Tm3+ : NaLa1/2Gd1/2(WO4)(2) crystals pumped by a diode laser is obtained for the first time. The pi- and sigma-polarised laser radiation at wavelengths of 1908 and 1918 nm was generated with a slope efficiency of 28 % and 25 %, respectively.
引用
收藏
页码：101 / 102
页数：2
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