Ferromagnetism of self-organized Ge1-xMnx nano-pillars

被引:4
|
作者
Devillers, T. [1 ]
Jamet, M. [1 ]
Barski, A. [1 ]
Poydenot, V. [1 ]
Dujardin, R. [1 ]
Bayle Guillemaud, P. [1 ]
Rothman, J. [2 ]
Bellet Amalric, E. [1 ]
Cibert, J. [3 ]
Mattana, R. [1 ]
Tatarenko, S. [4 ]
机构
[1] CEA, Serv Phys Mat & Microstruct, Dept Rech Fondamentale Mat Condensee, 17 Ave Martyrs, F-38054 Grenoble 9, France
[2] CEA Grenoble, Lab Infrarouge, Lab Elect Technol Informat, F-38054 Grenoble, France
[3] CNRS, Lab Louis Neel, F-38042 Grenoble, France
[4] Lab Spectrometrie Phys, F-38042 Saint Martin Heres, France
关键词
D O I
10.1002/pssc.200672806
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In the search for high-T-C Si or Ge based ferromagnetic semiconductors, we present here the magnetic and transport properties of Ge1-xMnx nano-pillars. These pillars self-organize during the MBE growth of thin Mn doped (6 %) Ge films as a consequence of the in-plane and out-of-plane diffusion of Mn atoms. Their composition is close to Ge2Mn and their average diameter and spacing are 3 nm and 10 nm respectively. Magnetic measurements evidence a ferromagnetic phase up to 400 K giving rise to anomalous Hall effect at room temperature. Moreover we evidence a large positive magnetoresistance (up to 7000 % at 30 K and 9 T) probably due to the conductivity mismatch between the Mn-rich nano-pillars and the Mn-poor surrounding Ge matrix.
引用
收藏
页码:4123 / 4126
页数:4
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