Adhesion of NiCu films DC biased plasma-sputter-deposited on MgO (001)

被引:0
|
作者
Qiu, H [1 ]
Hashimoto, M
机构
[1] Beijing Keda Tianyu Microelect Mat Technol Dev Co, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Appl Sci Sch, Beijing 100083, Peoples R China
[3] Univ Electrocommun, Dept Appl Phys & Chem, Tokyo 1828585, Japan
关键词
NiCu film; plasma-sputter-deposition; negative bias voltage; adhesion;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
NiCu films about 60 nm thick were deposited on MgO (001) substrates at 230 degreesC by DC plasma-sputtering at 2.7 kV and 8 mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage U, of 0, - 60, - 110 or - 140 V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of U,. The application of U, is very effective in increasing the adhesion of the film to the substrate. in conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.
引用
收藏
页码:218 / 221
页数:4
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