Formation and Characterization of Concentration Inhomogeneities in Melt-Grown Crystals

被引：0
|
作者：
Korobeinikova, E. N. [1 ]
Prokhorov, I. A. [1 ]
Bezbakh, I. Zh [1 ]
Shul'pina, I. L. [2 ]
机构：
[1] Russian Acad Sci, Fed Sci Res Ctr Crystallog & Photon, Shubnikov Inst Crystallog, Moscow 119333, Russia
[2] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2021年 / 66卷 / 03期
关键词：
MICROSEGREGATION;
D O I：
10.1134/S1063774521030111
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The specific features of the formation of concentration inhomogeneities in crystals grown by the Czochralski method (GaSb:Te, Ge:Ga) and by the Bridgman method (Y3Al5O12:Nd, ZnGeP2, GaSb:Te, Ge:Ga) are analyzed. Digital processing of growth striation (GS) images showed the presence of strict periodicity in the GS distribution along the boule length for the Czochralski-grown crystals (rotational GSs) and the absence of systematic GS distribution for the crystals grown by the Bridgman method. Possible reasons for the observed regularities of variation in crystal composition are discussed.
引用
收藏
页码：387 / 393
页数：7
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