Intersubband resonant enhancement of second-harmonic generation in GaN/AlN quantum wells.

被引：0
|
作者：
Nevou, L. [1 ]
Raybaut, M. [1 ]
Tchernycheva, M. [1 ]
Guillot, F. [3 ]
Monroy, E. [3 ]
Jullien, F.
Godard, A. [2 ]
Rosencher, E. [2 ]
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, UMR 8622, CNRS, F-91405 Orsay, France
[2] Office Natl Recherches Aerospat, Palaiseau, France
[3] RFMC SP2M PSC, CEA CNRS UJF, Grenoble, France
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
second harmonic generation; intersubband transitions; nitride quantum wells;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the observation of resonant enhancement by intersubband transitions of the second-harmonic generation of 1 mu m radiation in GaN/AlN quantum wells grown on AlN/c-sapphire templates. The quantum wells with a nominal well thickness of 10 monolayers have been investigated in terms of intersubband linear and nonlinear optical properties. A strong increase of the second harmonic conversion is observed at a pump wavelength of 2 mu m, which is attributed to double-resonance enhancement of the nonlinear susceptibility by intersubband transitions. The second-order susceptibility at resonance is of the order of 114 pm/V in good agreement with calculations and corresponds to a factor of 4 enhancement with respect to bulk GaN.
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页码：483 / +
页数：2
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