On-Wafer Broadband Microwave Measurement of High impedance Devices - CPW Test Structures with Integrated Metallic Nano-resistances

被引：0

作者：

Daffe, K. ^{[1
]}

Mubarak, F. ^{[2
]}

Mascolo, V. ^{[2
]}

Votsi, H. ^{[3
,4
]}

Ridler, N. M. ^{[4
]}

Dambrine, G. ^{[1
]}

Roch, I. ^{[1
]}

Haddadi, K. ^{[1
]}

机构：

[1] Univ Lille, CNRS, UMR 8520, IEMN, F-59000 Lille, France

[2] VSL, Delft, Netherlands

[3] Univ Surrey, Adv Technol Inst, Guildford, Surrey, England

[4] Natl Phys Lab, Teddington, Middx, England

来源：

2018 48TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2018年

关键词：

On-wafer calibration; vector network analyzer (VNA); two-port measurement; coplanar waveguide (CPW); uncertainty;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On-wafer microwave characterization and uncertainty evaluation of two-port coplanar waveguide (CPW) high impedance nanodevices are proposed. The test devices are manufactured with resistive metallic nano-films integrated in tapered CPW structures. Microwave conductance in the range 100-500 mu S associated to parallel capacitances in the order of hundreds aF are exemplary shown up to 20 GHz. The uncertainty corresponding to the post-calibration residual errorsterms is provided. In addition, a sensitivity analysis investigating technological process variability using FEM-based EM modelling is considered.

引用

页码：25 / 28

页数：4