Application of moist ozone gbs phase for removal of resist and organic contamination in a novel tank type processor

被引：0

作者：

Wolke, K ^{[1
]}

Riedel, T ^{[1
]}

Haug, R ^{[1
]}

deGendt, S ^{[1
]}

Heyns, MM ^{[1
]}

Meuris, M ^{[1
]}

机构：

[1] STEAG MicroTech GmbH, D-72124 Pliczhausen, Germany

来源：

CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING | 2000年 / 99卷 / 36期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The use of ozone dissolved in ultrapure de-ionized water for the removal of photo resist has been found to be less effective than sulfuric acid based processes. To overcame the main detractor, the low concentration of ozone at the wafer surface the application of ozone in ct moist atmosphere has been studied in order to define and characterize the efficiency of resist removal in a wet process tank environment. Basic dependencies of temperature, ozone concentration and humidity were evaluated, as well as the impact of rinse steps during and after the ozone treatment. It was shown that strip rates of > 300 nm/min far typical types of photo resists after various conditions can be achieved and a complete resist removal process including UPW rinse of less than 10 min is possible in wet bench applications. CoO reduction of 10 - 20% are achieved compared to sulphuric based strip processes.

引用

页码：204 / 211

页数：8