Research of the Characteristics of Semiconductor Bridge (SCB) Plasma

被引：2
|
作者：
Wang, Renbao [1 ]
Zhu, Shunguan [2 ]
Sun, Qiang [1 ]
Xu, Zhenfeng [1 ]
机构：
[1] Hefei Univ, Sch Adv Mfg Engn, Hefei 230601, Peoples R China
[2] Nanjing Univ Sci & Technol, Sch Chem Engn, Nanjng 210094, Peoples R China
来源：
FUSION SCIENCE AND TECHNOLOGY | 2021年 / 77卷 / 06期
关键词：
SCB plasma; electron density; temperature; atomic emission spectroscopy; CHIP;
D O I：
10.1080/15361055.2021.1920770
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
A better understanding of semiconductor bridge (SCB) discharge behavior under different firing conditions was crucial to revealing the mechanism of the SCB ignition technique. In this paper, the tests on the basic parameters, including the onset time, duration time, temperature, and electron density of SCB plasma, were carried out. A simpler and more economical system was used to discuss the characteristics of SCB plasma under the different input energy conditions.
引用
收藏
页码：463 / 468
页数：6
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