Characterization of a Ga-Assisted GaAs Nanowire Array Solar Cell on Si Substrate

被引：40
|
作者：
Boulanger, J. P. [1 ]
Chia, A. C. E. [1 ]
Wood, B. [1 ]
Yazdi, S. [2 ,3 ]
Kasama, T. [2 ]
Aagesen, M. [4 ]
LaPierre, R. R. [1 ]
机构：
[1] McMaster Univ, Ctr Emerging Device Technol, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[2] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark
[3] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
[4] Gasp Solar ApS, DK-2630 Taastrup, Denmark
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2016年 / 6卷 / 03期
基金：
加拿大自然科学与工程研究理事会;
关键词：
Gallium arsenide; nanowires; photovoltaic (PV) cells; AXIS ELECTRON HOLOGRAPHY; EFFICIENCY; GROWTH; DESIGN; JUNCTIONS; DEVICES; LIMIT;
D O I：
10.1109/JPHOTOV.2016.2537547
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facetdependent properties to minimize passivation layer removal for electrical contacting is demonstrated. Thorough electrical characterization and analysis of the cell is reported. The electrostatic potential distribution across the radial p-i-n junction GaAs NW is investigated by off-axis electron holography.
引用
收藏
页码：661 / 667
页数：7
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