Level-broadening effects on the inelastic light-scattering spectrum due to coupled plasmon-phonon modes in δ-doped semiconductors

The Raman scattering intensity of delta-doped semiconductors is evaluated. The dynamical response of the multisubband two-dimensional electron system which is coupled to optical phonons;is calculated within the random-phase approximation. Our calculation shows that both intrasubband and intersubband plasmon modes are strongly coupled to optical-phonon modes. Level broadening due to high impurity concentration modifies the inelastic light scattering spectrum significantly. However, a few scattering peaks corresponding to phonon-like modes can be observed even at large broadening.