Time-resolved photoconductivity as a probe of carrier transport in microcrystalline silicon

被引：0
|
作者：
Reynolds, Steve [1 ]
机构：
[1] Forschungszentrum Julich, Inst Photovoltaics, D-52425 Julich, Germany
来源：
AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2006 | 2007年 / 910卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The use of transient photoconductivity techniques in the investigation of carrier transport in microcrystalline silicon is described. Results are presented which highlight variations in transport parameters such as carrier mobility and density of states with structure composition. Hole mobility is significantly enhanced by crystalline content in the film of 10% or less. The density of states inferred from transport measurements parallel to and at right angles to the direction of film growth differ somewhat, suggesting that transport may be anisotropic.
引用
收藏
页码：3 / 14
页数：12
相关论文
共 50 条
  • [1] Carrier dynamics in microcrystalline silicon studied by time-resolved terahertz spectroscopy
    Fekete, L.
    Nemec, H.
    Kadlec, F.
    Kuzel, P.
    Stuchlik, J.
    Fejfar, A.
    Kocka, J.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (26-27) : 2846 - 2849
  • [2] Ultrafast carrier dynamics in microcrystalline silicon studied by time-resolved terahertz spectroscopy
    Fekete, L.
    Kuzel, P.
    Nemec, H.
    Kadlec, F.
    Fejfar, A.
    [J]. 2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2, 2009, : 71 - 72
  • [3] Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy
    Fekete, L.
    Kuzel, P.
    Nemec, H.
    Kadlec, F.
    Dejneka, A.
    Stuchlik, J.
    Fejfar, A.
    [J]. PHYSICAL REVIEW B, 2009, 79 (11):
  • [4] STEADY-STATE AND TIME-RESOLVED PHOTOLUMINESCENCE IN MICROCRYSTALLINE SILICON
    KOMURO, S
    AOYAGI, Y
    SEGAWA, Y
    NAMBA, S
    MASUYAMA, A
    KRUANGAM, D
    OKAMOTO, H
    HAMAKAWA, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 943 - 947
  • [5] Time resolved imaging of carrier and thermal transport in silicon
    Hurley, D. H.
    Wright, O. B.
    Matsuda, O.
    Shinde, S. L.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
  • [6] Time-resolved carrier tunneling in nanocrystalline silicon/amorphous silicon dioxide superlattices
    Duzhko, V
    Tsybeskov, L
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (25) : 5229 - 5231
  • [7] Time-resolved probe of transient carrier dynamics by optical pump-probe STM
    Shigekawa, Hidemi
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2013, 246
  • [8] Steady-state and time-resolved photoconductivity measurements of minority carrier lifetime in ZnTe
    Bose, DN
    Ahrenkiel, RK
    Bhunia, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6599 - 6601
  • [9] Steady-state and time-resolved photoconductivity measurements of minority carrier lifetime in ZnTe
    Bose, DN
    Johnston, S
    Ahrenkiel, RK
    Bhunia, S
    [J]. PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 1349 - 1352
  • [10] CHARACTERISTICS OF THE TIME-RESOLVED PHOTOLUMINESCENCE IN MICROCRYSTALLINE SI
    KOMURO, S
    AOYAGI, Y
    SEGAWA, Y
    NAMBA, S
    MASUYAMA, A
    KRUANGAM, D
    OKAMOTO, H
    HAMAKAWA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (04): : 648 - 649
12345