Conventional X-rays for characterization of amorphous phases

The use of conventional X-ray diffraction coupled to a position-sensitive detector is shown for the characterization and quantification of amorphous or highly distorted phases. The experimental arrangement is suited for both bulky materials - by choosing relatively large incident angles - and thin films where shallow angles (similar to 2degrees) are required. Systems studied cover a broad variety of problems, and include, for example: polycrystalline silicon thin films, where crystallization is to be studied, and minerals such as agates and radiation-damaged zircon where the content of amorphous phase is to be determined and quantified. Data will be used to comment on the potential and limitations of the experimental method.