Defects in pressure-annealed Cz-Si and SiGe/Si

被引：0
|
作者：
Misiuk, A
Zaumseil, P
Antonova, I
Bak-Misiuk, J
Bugiel, E
Hartwig, J
Romano-Rodriguez, A
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[2] Inst Semicond Phys, D-15204 Frankfurt, Germany
[3] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[5] ESRF, F-38043 Grenoble, France
[6] Univ Barcelona, E-08028 Barcelona, Spain
来源：
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997 | 1998年 / 160卷
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D O I：
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Effect of hydrostatic pressure (of up to 1.6GPa at up to 1620K) on defect structure of Ct-Si and SiGe/Si was investigated. It were observed pressure - stimulated activation of initially present inhomogeneities with creation of oxygen - related dejects in Ct-Si and enhancement of Ge diffusion with generation of misfit dislocations in SiGe/Si.
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页码：273 / 276
页数：4
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