Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

被引：0
|
作者：
Martin, Maria J. [1 ]
Rengel, Raul [1 ]
Pascual, Elena [1 ]
Gonzalez, Tomas [1 ]
机构：
[1] Univ Salamanca, Dept Fis Aplicada, Plaza Merced S-N, E-37008 Salamanca, Spain
来源：
2007 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS | 2007年
关键词：
SOI MOSFETs; Monte Carlo simulation; device scaling; ballistic and quasi-ballistic transport;
D O I：
10.1109/SCED.2007.384063
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Monte Carlo investigation of carrier transport in scaled FDSOI MOSFETs is presented, with particular attention to the onset of quasi-ballistic transport. Results show that for gate lengths below 30 nm quasi-ballistic transport becomes dominant, thus noticeably modifying the ideally scaled properties of the transistors. Impurity screening plays an important role on the determination of the electron transit time through the channel, particularly at low drain voltages.
引用
收藏
页码：340 / +
页数：2
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