Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1-xSbx

被引:200
|
作者
Bhattacharya, S
Pope, AL
Littleton, RT
Tritt, TM [1 ]
Ponnambalam, V
Xia, Y
Poon, SJ
机构
[1] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
[2] Univ Virginia, Dept Phys, Charlottesville, VA 22901 USA
关键词
D O I
10.1063/1.1318237
中图分类号
O59 [应用物理学];
学科分类号
摘要
Half-Heusler alloys (MgAgAs type) with the general formula MNiSn where M is a group IV transition metal (Hf, Zr, or Ti) are currently under investigation for potential thermoelectric materials. These materials exhibit a high negative thermopower (-40 to -250 mu V/K) and low electrical resistivity values (0.1-8 m Omega cm) both of which are necessary for a potential thermoelectric material. Results are presented in this letter regarding the effect of Sb doping on the Sn site (TiNiSn1-xSbx). The Sb doping leads to a relatively large power factor of (0.2-1.0) W/m K at room temperature for small concentrations of Sb. These values are comparable to that of Bi2Te3 alloys, which are the current state-of-the-art thermoelectric materials. The power factor is much larger at T approximate to 650 K where it is over 4 W/m K making these materials very attractive for potential power generation considerations. (C) 2000 American Institute of Physics. [S0003- 6951(00)01142-6].
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收藏
页码:2476 / 2478
页数:3
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