Thin Film Metal-Insulator-Metal Junction for Millimeter Wave Detection

被引：21
|
作者：
Krishnan, S. [1 ]
Bhansali, S. [1 ,2 ]
Stefanakos, E. [2 ]
Goswami, Y. [2 ]
机构：
[1] Univ S Florida, Clean Energy Res Ctr, Coll Engn, 4202 E Fowler Ave, Tampa, FL 33620 USA
[2] Univ S Florida, Dept Elect Engn, BioMEMS & Microsyst Lab, Tampa, FL 33620 USA
来源：
PROCEEDINGS OF THE EUROSENSORS XXIII CONFERENCE | 2009年 / 1卷 / 01期
关键词：
MIM tunnel junctions; Ni-NiO-Cr; millimeter wave detection; 94; GHz;
D O I：
10.1016/j.proche.2009.07.102
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this work, thin film Metal-Insulator-Metal (MIM) tunnel junction based detector using Ni-NiO-Cr has been developed for Millimeter wave (MMW) detection operating at 94 GHz. Arrays of MIM junctions with 1 mu m(2) contact area and an ultra-thin insulator layer of similar to 3 nm has been fabricated using e-beam lithography and reactive sputtering techniques. The device characteristics and performance were evaluated by measuring the electrical response of the tunnel junctions. The electrical characteristics of the tunnel junction demonstrated a significant degree of nonlinearity and asymmetry with a sensitivity of 7 V-1 and a MMW response in the mu A range tuned by external bias.
引用
收藏
页码：409 / +
页数：2
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