High reflection optics and high precision metrology for extreme ultraviolet (EUV) light

The ever-decreasing pattern size of structures in integrated circuits requires lithography processes using light of ever-shorter wavelengths. Currently, laser light with wavelengths of 248 nm and 193 nm is used for the illumination in production lines of semiconductor factories. However, since several years many research groups are already dealing with the most promising next generation lithography, the extreme ultraviolet lithography (EUVL) that will use light with a wavelength of 13.5 nm. This paper summarizes recent research and development results of IWS Dresden in the field of preparation of EUV reflection optics and EUV metrology.