Charge transport in single CuO nanowires

被引：34
|
作者：
Wu, Junnan [1 ]
Yin, Bo [1 ]
Wu, Fei [1 ]
Myung, Yoon [1 ]
Banerjee, Parag [1 ]
机构：
[1] Washington Univ, Dept Mech Engn & Mat Sci, St Louis, MO 63130 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 18期
基金：
美国国家科学基金会;
关键词：
LIMITED CURRENTS; SENSITIVITY; COPPER;
D O I：
10.1063/1.4900966
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Charge transport in single crystal, p-type cupric oxide (CuO) nanowire (NW) was studied through temperature based (120 K-400 K) current-voltage measurements. CuO NW with a diameter of 85 nm was attached to Au electrodes 2.25 mu m apart, using dielectrophoresis. At low electrical field (< 0.89 x 10(3) V/cm), an ohmic conduction is observed with an activation energy of 272 meV. The injected electrons fill traps with an average energy, E-T = 26.6 meV and trap density, N-T = 3.4 x 10(15) cm(-3). After the traps are saturated, space charge limited current mechanism becomes dominant. For 120K <= T <= 210K phonon scattering limits mobility. For T >= 220 K, a thermally activated mobility is observed and is attributed to small polaron hopping with an activation energy of 44 meV. This mechanism yields a hole mobility of 0.0015 cm(2)/V s and an effective hole concentration of 4 x 10(18) cm(-3) at 250 K. (C) 2014 AIP Publishing LLC.
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页数：5
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