Multiple dip deposition of CdS films prepared by oscillating chemical bath

被引：6

作者：

Gutierrez-Lazos, C. D. ^{[2
]}

Rosendo, E. ^{[1
]}

Oliva, A. I. ^{[3
]}

Ortega, M. ^{[2
]}

Bartolo-Perez, P. ^{[3
]}

Juarez, H. ^{[1
]}

Diaz, T. ^{[1
]}

Garcia, G. ^{[1
]}

Rubin, M. ^{[4
]}

机构：

[1] Univ Autonoma Puebla, Ctr Invest Disposit Semiconductores, Inst Ciencias, Puebla 72570, Mexico

[2] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Secc Elect Estado Solido, Dept Ingn Elect, Mexico City 07360, DF, Mexico

[3] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Fis Aplicada, Merida 97310, Mexico

[4] Benemerita Univ Autonoma Puebla, Fac Ciencias Computac, Puebla 72570, Mexico

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 19期

关键词：

Cadmium sulfide; Thin films; Chemical bath deposition; X-ray diffraction; SULFIDE THIN-FILMS; SOLAR-CELL;

D O I：

10.1016/j.tsf.2010.03.065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly oriented CdS thin films with thicknesses greater than 1 mu m were deposited using the oscillating chemical bath deposition technique with multiple dips at 75 degrees C, and from 15 to 75 min as deposition times. Samples with different thicknesses were deposited by repeating the chemical deposition process one, two and three times. All CdS films present the alpha-greenockite hexagonal structure with (002) as the preferential orientation. Band-gap energy values ranged from 2.35 to 2.42 eV, being the smaller value for the two dip processes. Energy dispersion spectroscopy measurements show good stoichiometry of the CdS films with 4.3 at.% as the maximum Cd variation. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：5387 / 5390

页数：4

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