Resistive switching memory based on organic/inorganic hybrid perovskite materials

被引：75

作者：

Liu, Yang ^{[1
]}

Li, Fushan ^{[1
]}

Chen, Zhixin ^{[1
]}

Guo, Tailiang ^{[1
]}

Wu, Chaoxing ^{[2
]}

Kim, Tae Whan ^{[2
]}

机构：

[1] Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China

[2] Hanyang Univ, Dept Dept Elect & Comp Engn, Seoul 133791, South Korea

来源：

VACUUM | 2016年 / 130卷

基金：

中国国家自然科学基金;

关键词：

Perovskite; Memory; Resistive switching; BISTABLE DEVICES; FIELD; MECHANISM; CELLS;

D O I：

10.1016/j.vacuum.2016.05.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10(3). Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：109 / 112

页数：4

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