Small polaron hopping conduction mechanism in Ni-doped LaFeO3

被引:16
|
作者
Khan, M. Wasi [1 ,2 ]
Husain, Shahid [2 ]
Khan, M. A. Majeed [1 ]
Gupta, Maneesha [3 ]
Kumar, Ravi [4 ]
Srivastava, J. P. [3 ]
机构
[1] King Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia
[2] Aligarh Muslim Univ, Dept Phys, Aligarh 202002, Uttar Pradesh, India
[3] Aligarh Muslim Univ, Dept Appl Phys, Aligarh 202002, Uttar Pradesh, India
[4] Interuniv Accelerator Ctr, New Delhi 110067, India
关键词
polaron hopping; orthorhombic phase; variable-range hopping model; density of states; electron-phonon interaction; ELECTRONIC-PROPERTIES; TRANSPORT-PROPERTIES; EXCITATION-SPECTRA; DOUBLE-EXCHANGE; MAGNETORESISTANCE; RESISTIVITY; FE; TRANSITION; BEHAVIOR; STATES;
D O I
10.1080/14786431003781604
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical transport properties of LaFe1-xNixO3 (0.1 x 0.6) bulk samples were investigated over a wide temperature range, i.e. 9-300 K. Powder x-ray diffraction patterns at room temperature showed that all samples were formed in a single phase. However, a structural transformation was observed from orthorhombic (Pnma) to rhombohedral crystal symmetry at x 0.5 in Ni-doped samples, which is supported by the electrical transport analysis. Temperature-dependent resistivity data were fitted using Mott's variable-range hopping model for a limited range of temperatures to calculate the hopping distance and the density of states at Fermi level. It was found that all parameters vary systematically with an increase in Ni concentration. Moreover, the resistivity data were also fitted using the small polaron hopping (SPH) model. The non-adiabatic SPH conduction mechanism is followed up to 50% Ni concentration, whereas an adiabatic hopping conduction mechanism is active above it. Such a change in the conduction mechanism is accompanied by subtle electronically induced structural changes involving Fe3+-O-Fe3+ and Fe3+-O-Ni3+ bond angles and bond lengths. Thus, we suggest that the transport properties can be explained according to the additional delocalization of charge carriers induced by Ni doping.
引用
收藏
页码:3069 / 3079
页数:11
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