Boron-related defect centers in 4H silicon carbide

被引：0
|
作者：
Troffer, T [1 ]
Hassler, C [1 ]
Pensl, G [1 ]
Holzlein, K [1 ]
Mitlehner, H [1 ]
Volkl, J [1 ]
机构：
[1] SIEMENS AG,FORSCHUNGSLAB,D-91052 ERLANGEN,GERMANY
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4H silicon carbide layers grown by CVD are boron-doped either by ion implantation or during the growth process. By means of Hall effect, deep level transient spectroscopy (DLTS), admittance spectroscopy, and IR absorption measurements, we have studied B-related defects. Two electrically active impurity levels are observed: the isolated boron acceptor at E(B) = E(V) + (285 +/- 10) meV and a boron-related energetically deep defect termed D-center at E(D) = E(V) + (440 +/- 40) meV, which acts as a donor. A small absorption dip at 291.2 meV observed in the IR absorption spectra is assigned to the excitation of a hole from the ground state of the boron acceptor to a bound 2p-like excited state.
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页码：281 / 284
页数：4
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