Multiferroic properties of HoMnO3 films and capacitor trilayers

被引：5
|
作者：
Kim, J.-W. [1 ]
Doerr, K. [1 ]
Nenkov, K. [1 ]
Schultz, L. [1 ]
机构：
[1] IFW Dresden, Inst Met Mat, D-01171 Dresden, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 09期
关键词：
D O I：
10.1063/1.2715848
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature magnetization with epitaxial hexagonal HoMnO3 films and single crystal has been investigated. The magnetization data of films show three distinctive transitions which are compared with those of a single crystal. In order to test the ferroelectric behavior of HoMnO3 thin films, epitaxial capacitor trilayers with Pt electrodes have been grown. For the well-prepared trilayer, a ferroelectric switching at room temperature has been demonstrated in spite of a certain degree of leakage with a film resistivity of about 10(7) Omega cm. (c) 2007 American Institute of Physics.
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页数：3
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