Traveling-wave photodetectors with high power-bandwidth and gain-bandwidth product performance

被引：8

作者：

Lasaosa, D ^{[1
]}

Shi, JW

Pasquariello, D

Gan, KG

Tien, MC

Chang, HH

Chu, SW

Sun, CK

Chiu, YJ

Bowers, JE

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Natl Cent Univ, Dept Elect Engn, Taoyuan 320, Taiwan

[3] Philips Res Labs, Eindhoven, Netherlands

[4] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[5] Natl Taiwan Univ, Grad Inst Electro Opt Engn, Taipei 10617, Taiwan

[6] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 804, Taiwan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2004年 / 10卷 / 04期

关键词：

amplifier; GaAs; high speed; InGaAsP; photodetector; traveling wave;

D O I：

10.1109/JSTQE.2004.833963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Traveling-wave photodetectors (TWPDs) are an attractive way to simultaneously maximize external quantum efficiency, electrical bandwidth, and maximum unsaturated output power. We review recent advances in TWPDs. Record high-peak output voltage together with ultrahigh-speed performance has been observed in low-temperature-grown GaAs (LTG-GaAs)-based metal-semiconductor-metal TWPDs at the wavelengths of 800 and 1300 nm. An approach to simultaneously obtain high bandwidth and high external efficiency is a traveling-wave amplifier-photodetector (TAP detector) that combines gain and absorption in either a sequential or simultaneous traveling-wave structure.

引用

页码：728 / 741

页数：14

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