Structural and photoluminesenct properties of Zn1-xMgxO thin film on silicon

被引:11
|
作者
Zou, L [1 ]
Wang, L [1 ]
Huang, JY [1 ]
Zhao, BH [1 ]
Ye, ZZ [1 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
关键词
Zn1-xMgxO alloy; Si-substrate; pusled laser deposition; c-oritation; PL spectra;
D O I
10.7498/aps.52.935
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
High-quality Zn1 - xMgxO thin film was grown on Si substrate by pulsed laser deposition (PLD). x-ray diffraction patterns indicated that the film was c-axis oriented, the full width at half maximum of (002) peak was only 0.211degrees, and no phase separation was observed. Transmission electron microscopy (TEM) verified the c-axis orientation of the Zn1 - x MgxO thin film. Regular diffraction spots can be observed by TEM. Photoluminescence spectrum was measured at room temperature. The near-band-energy emission peak of the Zn1-xMgxO thin film has a blue shift of 0.4 eV from that of ZnO, and the ratio of near-band-energy to the defect-level peak intensity was as large as 159. These results indicate that Zn1 - xMgxO thin film can have potential applications in optoelectronic devices.
引用
收藏
页码:935 / 938
页数:4
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