Impurities in a biased graphene bilayer

被引：100
|
作者：
Nilsson, Johan [1 ]
Castro Neto, A. H. [1 ]
机构：
[1] Boston Univ, Dept Phys, Boston, MA 02215 USA
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 12期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1103/PhysRevLett.98.126801
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We study the problem of impurities and midgap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field effect. Moreover, the band gap is renormalized and impurity bands are created at finite impurity concentrations. Using the coherent potential approximation, we calculate the electronic density of states and its dependence on the applied bias voltage.
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页数：4
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