SrRuO3/SrTiO3/SrRuO3 heterostructures for magnetic tunnel junctions

被引：20
|
作者：
Herranz, G
Martínez, B
Fontcuberta, J
Sánchez, F
García-Cuenca, MV
Ferrater, C
Varela, M
机构：
[1] Inst Ciencia Mat Barcelona, Bellaterra 08193, Catalunya, Spain
[2] Univ Barcelona, Dept Fis Aplicada & Opt, E-08028 Barcelona, Catalunya, Spain
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期
关键词：
D O I：
10.1063/1.1555372
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the growth and characterization of SrRuO3 single layers and SrRuO3/SrTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates. The thickness dependence of the coercivity was determined for these single layers. Heterostructures with barrier thickness t(b)=1, 2.5, and 4 nm were fabricated, with electrodes having thickness ranging from 10 to 100 nm. The hysteresis loops of heterostructures with t(b)=2.5 nm, 4 nm reveal uncoupled magnetic switching of the electrodes. Therefore, these heterostructures can be used for the fabrication of magnetic tunneling junctions. (C) 2003 American Institute of Physics.
引用
收藏
页码：8035 / 8037
页数：3
相关论文
共 50 条
  • [1] Structural, magnetic and electrical properties of SrRuO3 films and SrRuO3/SrTiO3 superlattices
    Bern, F.
    Ziese, M.
    Setzer, A.
    Pippel, E.
    Hesse, D.
    Vrejoiu, I.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 25 (49)
  • [2] Reliability of SrRuO3/SrTiO3/SrRuO3 Stacks for DRAM Applications
    Kupke, S.
    Knebel, S.
    Schroeder, U.
    Schmelzer, S.
    Boettger, U.
    Mikolajick, T.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (12) : 1699 - 1701
  • [3] Symmetry-controlled SrRuO3/SrTiO3/SrRuO3 magnetic tunnel junctions: spin polarization and its relevance to tunneling magnetoresistance
    Samanta, Kartik
    Tsymbal, Evgeny Y.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2024, 36 (49)
  • [4] Multiple relaxation mechanisms in SrTiO3/SrRuO3 heterostructures
    Ban, ZG
    Alpay, SP
    He, F
    Wells, BO
    Xi, XX
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (24) : 4848 - 4850
  • [5] Magnetic properties of SrRuO3/SrTiO3 superlattices
    Izumi, M
    Nakazawa, K
    Bando, Y
    Yoneda, Y
    Terauchi, H
    [J]. SOLID STATE IONICS, 1998, 108 (1-4) : 227 - 233
  • [6] Tailoring Photovoltage Response at SrRuO3/SrTiO3 Heterostructures
    Yukawa, Ryu
    Yamamoto, Susumu
    Akikubo, Kazuma
    Takeuchi, Kaori
    Ozawa, Kenichi
    Kumigashira, Hiroshi
    Matsuda, Iwao
    [J]. ADVANCED MATERIALS INTERFACES, 2016, 3 (22):
  • [7] Response of the capacitance and dielectric loss of the SrRuO3/SrTiO3/SrRuO3 film heterostructures to variations in temperature and electric field
    Boikov, Yu. A.
    Danilov, V. A.
    [J]. PHYSICS OF THE SOLID STATE, 2016, 58 (10) : 2126 - 2129
  • [8] Response of the capacitance and dielectric loss of the SrRuO3/SrTiO3/SrRuO3 film heterostructures to variations in temperature and electric field
    Yu. A. Boikov
    V. A. Danilov
    [J]. Physics of the Solid State, 2016, 58 : 2126 - 2129
  • [9] Characterization of the Schottky barrier in SrRuO3/Nb:SrTiO3 junctions
    Hikita, Y.
    Kozuka, Y.
    Susaki, T.
    Takagi, H.
    Hwang, H. Y.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (14)
  • [10] Capacitance of (001)SrRuO3/(001)SrTiO3 and (110)SrRuO3/(110)SrTiO3 interfaces in epitaxial heterostructures grown on LaAlO3 substrates
    Boikov, Yu. A.
    Danilov, V. A.
    [J]. TECHNICAL PHYSICS LETTERS, 2006, 32 (04) : 320 - 322
12345