A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides

被引：21
|
作者：
Degraeve, R
DeBlauwe, J
Ogier, JL
Roussel, P
Groeseneken, G
Maes, HE
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.553595
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the impact of oxide nitridation on high field FN-degradation is studied. Nitridation causes a significant decrease of the oxide trap generation and also introduces an additional polarity dependence of the degradation, which can be modelled by taking into account the asymmetry of the nitrogen profile in the oxide. The nitridation effects on trap generation are correlated with changes in the Weibull slope of the Q(BD)-distribution.
引用
收藏
页码：327 / 330
页数：4
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