Transport properties of quantum dots with strong electron-phonon interaction

被引:3
|
作者
Tasai, T [1 ]
Eto, M [1 ]
机构
[1] Keio Univ, Fac Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 22385222, Japan
来源
关键词
self-assembled quantum dot; polaron; electron-phonon interaction; resonant tunneling;
D O I
10.1016/S1386-9477(02)00758-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We theoretically examine the transport properties of quantum dots with strong electron-phonon interaction. When a separation between discrete electron-levels in a quantum dot matches the energy of the LO phonons, the electron-phonon interaction results in polarons, coherent states consisting of an electron and LO phonons. The Rabi splitting between two levels in the quantum dot is observable in a peak structure of the differential conductance G as a function of the bias voltage. The polaron formation suppresses the peak height of G, which is due to the competition between the resonant tunneling (resonance between a level in the dot and states in the leads) and the polaron formation (Rabi oscillation between two levels in the dot). G shows a sharp dip at the midpoint between the split peaks. This is attributable to the destructive interference between bonding and anti-bonding states in a composite system of an electron and phonons. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:139 / 142
页数:4
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