Exciton/plasmon mixing in metal-semiconductor heterostructures

被引：5
|
作者：
Symonds, Clementine [1 ]
Bellessa, Joel [1 ]
Plenet, Jean-Claude [1 ]
Cambril, Edmond [2 ]
Miard, Audrey [2 ]
Ferlazzo, Laurence [2 ]
Lemeitre, Aristide [2 ]
机构：
[1] Univ Lyon 1, Lab PMCN, CNRS, UMR 5586, F-69622 Villeurbanne, France
[2] CNRS UPR20, Lab Photon & Nanostruct, F-91460 Marcoussis, France
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2010年 / 47卷 / 01期
关键词：
Surface plasmons; Strong coupling; Inorganic semiconductors; BAND-GAP; MICROCAVITY; STATES;
D O I：
10.1016/j.spmi.2009.07.031
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the strong coupling between surface plasmons and inorganic quantum well excitons. The sample is formed by a corrugated silver film deposited on the top of a heterostructure consisting of five GaAs/GaAlAs quantum wells grown by molecular beam epitaxy. Reflectometry experiments at low temperature (77 K) evidence the formation of plasmon/heavy-hole exciton/light-hole exciton mixed states. The interaction energies, deduced by fitting the experimental data with a coupled oscillator model, amount to 22 meV for the plasmon/light-hole exciton and 21 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling are also discussed and qualitatively related to the plasmon polarization. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：50 / 54
页数：5
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